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SI1330EDL-T1-E3 Datasheet

SI1330EDL-T1-E3 Cover
DatasheetSI1330EDL-T1-E3
File Size223.37 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1330EDL-T1-E3
Description MOSFET N-CH 60V 240MA SOT323-3

SI1330EDL-T1-E3 - Vishay Siliconix

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SI1330EDL-T1-E3 SI1330EDL-T1-E3 Vishay Siliconix MOSFET N-CH 60V 240MA SOT323-3 9266

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URL Link

SI1330EDL-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

240mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3

Package / Case

SC-70, SOT-323