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SI1070X-T1-E3 Datasheet

SI1070X-T1-E3 Cover
DatasheetSI1070X-T1-E3
File Size149.82 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1070X-T1-E3, SI1070X-T1-GE3
Description MOSFET N-CH 30V 1.2A SOT563F, MOSFET N-CH 30V 1.2A SOT563F

SI1070X-T1-E3 - Vishay Siliconix

SI1070X-T1-E3 Datasheet Page 1
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SI1070X-T1-E3 Datasheet Page 8

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SI1070X-T1-E3 SI1070X-T1-E3 Vishay Siliconix MOSFET N-CH 30V 1.2A SOT563F 173

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SI1070X-T1-GE3 SI1070X-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 1.2A SOT563F 9831

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URL Link

SI1070X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

99mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

1.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

385pF @ 15V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

SI1070X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

99mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

1.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

385pF @ 15V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666