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SI1033X-T1-E3 Datasheet

SI1033X-T1-E3 Cover
DatasheetSI1033X-T1-E3
File Size78.95 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1033X-T1-E3, SI1033X-T1-GE3
Description MOSFET 2P-CH 20V 0.145A SOT563F, MOSFET 2P-CH 20V 0.145A SC89

SI1033X-T1-E3 - Vishay Siliconix

SI1033X-T1-E3 Datasheet Page 1
SI1033X-T1-E3 Datasheet Page 2
SI1033X-T1-E3 Datasheet Page 3
SI1033X-T1-E3 Datasheet Page 4
SI1033X-T1-E3 Datasheet Page 5

The Products You May Be Interested In

SI1033X-T1-E3 SI1033X-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.145A SOT563F 439

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SI1033X-T1-GE3 SI1033X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 0.145A SC89 410

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URL Link

SI1033X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

145mA

Rds On (Max) @ Id, Vgs

8Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6

SI1033X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

145mA

Rds On (Max) @ Id, Vgs

8Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6