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SI1021R-T1-E3 Datasheet

SI1021R-T1-E3 Cover
DatasheetSI1021R-T1-E3
File Size152.74 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1021R-T1-E3, SI1021R-T1-GE3
Description MOSFET P-CH 60V 190MA SC-75A, MOSFET P-CH 60V 190MA SC-75A

SI1021R-T1-E3 - Vishay Siliconix

SI1021R-T1-E3 Datasheet Page 1
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SI1021R-T1-GE3 SI1021R-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 190MA SC-75A 60326

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URL Link

SI1021R-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 15V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23pF @ 25V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A

SI1021R-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 15V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23pF @ 25V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A