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SI1002R-T1-GE3 Datasheet

SI1002R-T1-GE3 Cover
DatasheetSI1002R-T1-GE3
File Size187.58 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1002R-T1-GE3
Description MOSFET N-CH 30V 610MA SC75A

SI1002R-T1-GE3 - Vishay Siliconix

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SI1002R-T1-GE3 SI1002R-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 610MA SC75A 240

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URL Link

SI1002R-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

610mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

560mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

36pF @ 15V

FET Feature

-

Power Dissipation (Max)

220mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A