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SCT2450KEC Datasheet

SCT2450KEC Cover
DatasheetSCT2450KEC
File Size779.42 KB
Total Pages14
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts SCT2450KEC
Description MOSFET N-CH 1200V 10A TO-247

SCT2450KEC - Rohm Semiconductor

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SCT2450KEC SCT2450KEC Rohm Semiconductor MOSFET N-CH 1200V 10A TO-247 252

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URL Link

SCT2450KEC

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

585mOhm @ 3A, 18V

Vgs(th) (Max) @ Id

4V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 18V

Vgs (Max)

+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds

463pF @ 800V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3