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RQK0607AQDQS#H1 Datasheet

RQK0607AQDQS#H1 Cover
DatasheetRQK0607AQDQS#H1
File Size134.1 KB
Total Pages10
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RQK0607AQDQS#H1
Description MOSFET N-CH

RQK0607AQDQS#H1 - Renesas Electronics America

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RQK0607AQDQS#H1 RQK0607AQDQS#H1 Renesas Electronics America MOSFET N-CH 118

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URL Link

RQK0607AQDQS#H1

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

270mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

2nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

UPAK

Package / Case

TO-243AA