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RQ3E180AJTB Datasheet

RQ3E180AJTB Cover
DatasheetRQ3E180AJTB
File Size2,424.41 KB
Total Pages12
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RQ3E180AJTB
Description MOSFET N-CH 30V 18A HSMR8

RQ3E180AJTB - Rohm Semiconductor

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URL Link

RQ3E180AJTB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 18A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 11mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

4290pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSMT (3.2x3)

Package / Case

8-PowerVDFN