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RQ3E130MNTB1 Datasheet

RQ3E130MNTB1 Cover
DatasheetRQ3E130MNTB1
File Size572.62 KB
Total Pages11
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RQ3E130MNTB1
Description MOSFET N-CH 30V 13A HSMT8

RQ3E130MNTB1 - Rohm Semiconductor

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URL Link

RQ3E130MNTB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.1mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSMT (3.2x3)

Package / Case

8-PowerVDFN