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RQ1E100XNTR Datasheet

RQ1E100XNTR Cover
DatasheetRQ1E100XNTR
File Size668.3 KB
Total Pages12
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RQ1E100XNTR
Description MOSFET N-CH 30V 10A TSMT8

RQ1E100XNTR - Rohm Semiconductor

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URL Link

RQ1E100XNTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 10V

FET Feature

-

Power Dissipation (Max)

550mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT8

Package / Case

8-SMD, Flat Lead