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RP1A090ZPTR Datasheet

RP1A090ZPTR Cover
DatasheetRP1A090ZPTR
File Size167.03 KB
Total Pages6
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RP1A090ZPTR
Description MOSFET P-CH 12V 9A MPT6

RP1A090ZPTR - Rohm Semiconductor

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URL Link

RP1A090ZPTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

12mOhm @ 9A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 6V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MPT6

Package / Case

6-SMD, Flat Leads