RN1906 Datasheet | OEMstron

Datasheet	RN1906,LF
File Size	460.73 KB
Total Pages	7
Manufacturer	Toshiba Semiconductor and Storage
Website	http://www.toshiba.com/taec/
Total Parts	This datasheet covers 12 part numbers
Associated Parts	RN1906,LF, RN1905,LF, RN1906(T5L,F,T), RN1906,LF(CT, RN1901,LF(CT, RN1905,LF(CT, RN1905(T5L,F,T), RN1904,LF(CT, RN1902,LF(CT, RN1902T5LFT, RN1903,LF(CT, RN1901FETE85LF
Description	TRANS 2NPN PREBIAS 0.2W US6, TRANS 2NPN PREBIAS 0.2W US6, TRANS 2NPN PREBIAS 0.2W US6, TRANS 2NPN PREBIAS 0.2W US6, TRANS 2NPN PREBIAS 0.2W US6

RN1906,LF - Toshiba Semiconductor and Storage

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URL Link

www.oemstron.com/datasheet/RN1906,LF

Toshiba Semiconductor and Storage

RN1906,LF

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1905,LF

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1906(T5L,F,T)

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1906,LF(CT

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1901,LF(CT

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

1kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1905,LF(CT

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1905(T5L,F,T)

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1904,LF(CT

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1902,LF(CT

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1902T5LFT

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1903,LF(CT

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Toshiba Semiconductor and Storage

RN1901FETE85LF

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

ES6