Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

RJK60S7DPK-M0#T0 Datasheet

RJK60S7DPK-M0#T0 Cover
DatasheetRJK60S7DPK-M0#T0
File Size193.95 KB
Total Pages8
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RJK60S7DPK-M0#T0
Description MOSFET N-CH 600V 30A TO-3PSG

RJK60S7DPK-M0#T0 - Renesas Electronics America

RJK60S7DPK-M0#T0 Datasheet Page 1
RJK60S7DPK-M0#T0 Datasheet Page 2
RJK60S7DPK-M0#T0 Datasheet Page 3
RJK60S7DPK-M0#T0 Datasheet Page 4
RJK60S7DPK-M0#T0 Datasheet Page 5
RJK60S7DPK-M0#T0 Datasheet Page 6
RJK60S7DPK-M0#T0 Datasheet Page 7
RJK60S7DPK-M0#T0 Datasheet Page 8

The Products You May Be Interested In

RJK60S7DPK-M0#T0 RJK60S7DPK-M0#T0 Renesas Electronics America MOSFET N-CH 600V 30A TO-3PSG 296

More on Order

URL Link

RJK60S7DPK-M0#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

+30V, -20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

Super Junction

Power Dissipation (Max)

227.2W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PSG

Package / Case

TO-3P-3, SC-65-3