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RJK6032DPH-E0#T2 Datasheet

RJK6032DPH-E0#T2 Cover
DatasheetRJK6032DPH-E0#T2
File Size93.87 KB
Total Pages7
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RJK6032DPH-E0#T2
Description MOSFET N-CH 600V 3A TO251

RJK6032DPH-E0#T2 - Renesas Electronics America

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URL Link

RJK6032DPH-E0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

285pF @ 25V

FET Feature

-

Power Dissipation (Max)

40.3W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA