Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

RJK6015DPK-00#T0 Datasheet

RJK6015DPK-00#T0 Cover
DatasheetRJK6015DPK-00#T0
File Size120.99 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RJK6015DPK-00#T0
Description MOSFET N-CH 600V 21A TO3P

RJK6015DPK-00#T0 - Renesas Electronics America

RJK6015DPK-00#T0 Datasheet Page 1
RJK6015DPK-00#T0 Datasheet Page 2
RJK6015DPK-00#T0 Datasheet Page 3
RJK6015DPK-00#T0 Datasheet Page 4
RJK6015DPK-00#T0 Datasheet Page 5
RJK6015DPK-00#T0 Datasheet Page 6
RJK6015DPK-00#T0 Datasheet Page 7
RJK6015DPK-00#T0 Datasheet Page 8
RJK6015DPK-00#T0 Datasheet Page 9

The Products You May Be Interested In

RJK6015DPK-00#T0 RJK6015DPK-00#T0 Renesas Electronics America MOSFET N-CH 600V 21A TO3P 100

More on Order

URL Link

RJK6015DPK-00#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3