Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

RJK2555DPA-00#J0 Datasheet

RJK2555DPA-00#J0 Cover
DatasheetRJK2555DPA-00#J0
File Size115.13 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RJK2555DPA-00#J0
Description MOSFET N-CH 250V 17A TO3P

RJK2555DPA-00#J0 - Renesas Electronics America

RJK2555DPA-00#J0 Datasheet Page 1
RJK2555DPA-00#J0 Datasheet Page 2
RJK2555DPA-00#J0 Datasheet Page 3
RJK2555DPA-00#J0 Datasheet Page 4
RJK2555DPA-00#J0 Datasheet Page 5
RJK2555DPA-00#J0 Datasheet Page 6
RJK2555DPA-00#J0 Datasheet Page 7
RJK2555DPA-00#J0 Datasheet Page 8
RJK2555DPA-00#J0 Datasheet Page 9

The Products You May Be Interested In

RJK2555DPA-00#J0 RJK2555DPA-00#J0 Renesas Electronics America MOSFET N-CH 250V 17A TO3P 200

More on Order

URL Link

RJK2555DPA-00#J0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

104mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WPAK

Package / Case

8-PowerWDFN