Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

RJK03M4DPA-00#J5A Datasheet

RJK03M4DPA-00#J5A Cover
DatasheetRJK03M4DPA-00#J5A
File Size151.27 KB
Total Pages7
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RJK03M4DPA-00#J5A
Description MOSFET N-CH 30V 35A WPAK

RJK03M4DPA-00#J5A - Renesas Electronics America

RJK03M4DPA-00#J5A Datasheet Page 1
RJK03M4DPA-00#J5A Datasheet Page 2
RJK03M4DPA-00#J5A Datasheet Page 3
RJK03M4DPA-00#J5A Datasheet Page 4
RJK03M4DPA-00#J5A Datasheet Page 5
RJK03M4DPA-00#J5A Datasheet Page 6
RJK03M4DPA-00#J5A Datasheet Page 7

The Products You May Be Interested In

RJK03M4DPA-00#J5A RJK03M4DPA-00#J5A Renesas Electronics America MOSFET N-CH 30V 35A WPAK 193

More on Order

URL Link

RJK03M4DPA-00#J5A

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2170pF @ 10V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WPAK

Package / Case

8-WFDFN Exposed Pad