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| Datasheet | RJK03C1DPB-00#J5 |
| File Size | 271.54 KB |
| Total Pages | 9 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RJK03C1DPB-00#J5 |
| Description | MOSFET N-CH 30V 60A LFPAK |
RJK03C1DPB-00#J5 - Renesas Electronics America
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URL Link
www.oemstron.com/datasheet/RJK03C1DPB-00#J5
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 10V FET Feature Schottky Diode (Body) Power Dissipation (Max) 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK Package / Case SC-100, SOT-669 |