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RFN30TS6SGC11 Datasheet

RFN30TS6SGC11 Cover
DatasheetRFN30TS6SGC11
File Size392.77 KB
Total Pages7
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RFN30TS6SGC11
Description DIODE GEN PURP 600V 30A TO247

RFN30TS6SGC11 - Rohm Semiconductor

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RFN30TS6SGC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1.55V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

60ns

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

Operating Temperature - Junction

150°C (Max)