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| Datasheet | RFD12N06RLESM9A |
| File Size | 868.48 KB |
| Total Pages | 12 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RFD12N06RLESM9A |
| Description | MOSFET N-CH 60V 18A DPAK |
RFD12N06RLESM9A - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/RFD12N06RLESM9A
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Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 63mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 485pF @ 25V FET Feature - Power Dissipation (Max) 49W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |