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| Datasheet | RF4E080GNTR |
| File Size | 2,392.97 KB |
| Total Pages | 11 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RF4E080GNTR |
| Description | MOSFET N-CH 30V 8A 8-HUML |
RF4E080GNTR - Rohm Semiconductor
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RF4E080GNTR | Rohm Semiconductor | MOSFET N-CH 30V 8A 8-HUML | 4727 More on Order |
URL Link
www.oemstron.com/datasheet/RF4E080GNTR
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 17.6mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package HUML2020L8 Package / Case 8-PowerUDFN |