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| Datasheet | RCD051N20TL |
| File Size | 787.24 KB |
| Total Pages | 14 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RCD051N20TL |
| Description | MOSFET N-CH 200V 5A CPT3 |
RCD051N20TL - Rohm Semiconductor
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URL Link
www.oemstron.com/datasheet/RCD051N20TL
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 760mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta), 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |