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R6020ENZ1C9 Datasheet

R6020ENZ1C9 Cover
DatasheetR6020ENZ1C9
File Size909.94 KB
Total Pages13
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts R6020ENZ1C9
Description MOSFET N-CH 600V 20A TO247

R6020ENZ1C9 - Rohm Semiconductor

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URL Link

R6020ENZ1C9

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

196mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3