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| Datasheet | QS6U22TR |
| File Size | 879.24 KB |
| Total Pages | 11 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | QS6U22TR |
| Description | MOSFET P-CH 20V 1.5A TSMT6 |
QS6U22TR - Rohm Semiconductor
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URL Link
www.oemstron.com/datasheet/QS6U22TR
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 215mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.25W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT6 (SC-95) Package / Case SOT-23-6 Thin, TSOT-23-6 |