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PSMN4R3-100ES Datasheet

PSMN4R3-100ES,127 Cover
DatasheetPSMN4R3-100ES,127
File Size802.67 KB
Total Pages14
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN4R3-100ES,127
Description MOSFET N-CH 100V 120A I2PAK

PSMN4R3-100ES,127 - Nexperia

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PSMN4R3-100ES,127 PSMN4R3-100ES,127 Nexperia MOSFET N-CH 100V 120A I2PAK 347

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URL Link

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9900pF @ 50V

FET Feature

-

Power Dissipation (Max)

338W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA