Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

PSMN1R1-30PL Datasheet

PSMN1R1-30PL,127 Cover
DatasheetPSMN1R1-30PL,127
File Size743.92 KB
Total Pages14
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN1R1-30PL,127
Description MOSFET N-CH 30V 120A TO220AB

PSMN1R1-30PL,127 - Nexperia

PSMN1R1-30PL Datasheet Page 1
PSMN1R1-30PL Datasheet Page 2
PSMN1R1-30PL Datasheet Page 3
PSMN1R1-30PL Datasheet Page 4
PSMN1R1-30PL Datasheet Page 5
PSMN1R1-30PL Datasheet Page 6
PSMN1R1-30PL Datasheet Page 7
PSMN1R1-30PL Datasheet Page 8
PSMN1R1-30PL Datasheet Page 9
PSMN1R1-30PL Datasheet Page 10
PSMN1R1-30PL Datasheet Page 11
PSMN1R1-30PL Datasheet Page 12
PSMN1R1-30PL Datasheet Page 13
PSMN1R1-30PL Datasheet Page 14

The Products You May Be Interested In

PSMN1R1-30PL,127 PSMN1R1-30PL,127 Nexperia MOSFET N-CH 30V 120A TO220AB 2471

More on Order

URL Link

PSMN1R1-30PL,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

243nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14850pF @ 15V

FET Feature

-

Power Dissipation (Max)

338W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3