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PMXB65ENEZ Datasheet

PMXB65ENEZ Cover
DatasheetPMXB65ENEZ
File Size740.59 KB
Total Pages15
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMXB65ENEZ
Description MOSFET N-CH 30V 3.2A 3DFN

PMXB65ENEZ - Nexperia

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PMXB65ENEZ PMXB65ENEZ Nexperia MOSFET N-CH 30V 3.2A 3DFN 349

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URL Link

PMXB65ENEZ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

67mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

295pF @ 15V

FET Feature

-

Power Dissipation (Max)

400mW (Ta), 8.33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1010D-3

Package / Case

3-XDFN Exposed Pad