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PMV45EN2VL Datasheet

PMV45EN2VL Cover
DatasheetPMV45EN2VL
File Size637.92 KB
Total Pages16
ManufacturerNexperia
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PMV45EN2VL, PMV45EN2R
Description MOSFET N-CH 30V 5.1A TO236AB, MOSFET N-CH 30V SOT23

PMV45EN2VL - Nexperia

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PMV45EN2VL PMV45EN2VL Nexperia MOSFET N-CH 30V 5.1A TO236AB 440

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PMV45EN2R PMV45EN2R Nexperia MOSFET N-CH 30V SOT23 176937

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URL Link

PMV45EN2VL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

42mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

209pF @ 15V

FET Feature

-

Power Dissipation (Max)

510mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

PMV45EN2R

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

42mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

209pF @ 15V

FET Feature

-

Power Dissipation (Max)

510mW (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3