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| Datasheet | PMV185XN,215 |
| File Size | 315.63 KB |
| Total Pages | 15 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMV185XN,215 |
| Description | MOSFET N-CH 30V 1.1A TO-236AB |
PMV185XN,215 - NXP
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PMV185XN,215 | NXP | MOSFET N-CH 30V 1.1A TO-236AB | 201 More on Order |
URL Link
www.oemstron.com/datasheet/PMV185XN,215
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 250mOhm @ 1.1A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 76pF @ 15V FET Feature - Power Dissipation (Max) 325mW (Ta), 1.275W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB (SOT23) Package / Case TO-236-3, SC-59, SOT-23-3 |