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| Datasheet | PMR280UN,115 |
| File Size | 339.88 KB |
| Total Pages | 14 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMR280UN,115 |
| Description | MOSFET N-CH 20V 0.98A SOT416 |
PMR280UN,115 - NXP
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PMR280UN,115 | NXP | MOSFET N-CH 20V 0.98A SOT416 | 124 More on Order |
URL Link
www.oemstron.com/datasheet/PMR280UN,115
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 980mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 340mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 45pF @ 20V FET Feature - Power Dissipation (Max) 530mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75 Package / Case SC-75, SOT-416 |