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PMN45EN Datasheet

PMN45EN,165 Cover
DatasheetPMN45EN,165
File Size329 KB
Total Pages13
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PMN45EN,165, PMN45EN,135
Description MOSFET N-CH 30V 5.2A 6TSOP, MOSFET N-CH 30V 5.2A 6TSOP

PMN45EN,165 - NXP

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The Products You May Be Interested In

PMN45EN,165 PMN45EN,165 NXP MOSFET N-CH 30V 5.2A 6TSOP 382

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PMN45EN,135 PMN45EN,135 Nexperia MOSFET N-CH 30V 5.2A 6TSOP 233

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

40mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 4.5V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

495pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

PMN45EN,135

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

40mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 4.5V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

495pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457