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| Datasheet | PMGD8000LN,115 |
| File Size | 332.74 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMGD8000LN,115 |
| Description | MOSFET 2N-CH 30V 0.125A 6TSSOP |
PMGD8000LN,115 - NXP
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PMGD8000LN,115 | NXP | MOSFET 2N-CH 30V 0.125A 6TSSOP | 313 More on Order |
URL Link
www.oemstron.com/datasheet/PMGD8000LN,115
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 125mA Rds On (Max) @ Id, Vgs 8Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 5V Power - Max 200mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package 6-TSSOP |