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PMFPB8032XP Datasheet

PMFPB8032XP,115 Cover
DatasheetPMFPB8032XP,115
File Size773.01 KB
Total Pages16
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMFPB8032XP,115
Description MOSFET P-CH 20V 2.7A HUSON6

PMFPB8032XP,115 - Nexperia

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URL Link

PMFPB8032XP,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

102mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

485mW (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-HUSON-EP (2x2)

Package / Case

6-UDFN Exposed Pad