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| Datasheet | PMFPB6532UP,115 |
| File Size | 603.04 KB |
| Total Pages | 19 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMFPB6532UP,115 |
| Description | MOSFET P-CH 20V 3.5A SOT1118 |
PMFPB6532UP,115 - NXP
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PMFPB6532UP,115 | NXP | MOSFET P-CH 20V 3.5A SOT1118 | 254 More on Order |
URL Link
www.oemstron.com/datasheet/PMFPB6532UP,115
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Manufacturer NXP USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 70mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 520mW (Ta), 8.3W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN2020-6 Package / Case 6-UDFN Exposed Pad |