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| Datasheet | PMEG3010ESBZ |
| File Size | 692.63 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | PMEG3010ESBZ, PMEG3010ESBYL |
| Description | DIODE SCHOTTKY 30V 1A DSN1006-2, DIODE SCHOTTKY 30V 1A DSN1006-2 |
PMEG3010ESBZ - Nexperia
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Manufacturer Nexperia USA Inc. Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 565mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 3.2ns Current - Reverse Leakage @ Vr 45µA @ 30V Capacitance @ Vr, F 32pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case 2-XDFN Supplier Device Package DSN1006-2 Operating Temperature - Junction 150°C (Max) |
Manufacturer Nexperia USA Inc. Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 565mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 3.2ns Current - Reverse Leakage @ Vr 45µA @ 30V Capacitance @ Vr, F 32pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case 2-XDFN Supplier Device Package DSN1006-2 Operating Temperature - Junction 150°C (Max) |