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PMEG3010AESBZ Datasheet

PMEG3010AESBZ Cover
DatasheetPMEG3010AESBZ
File Size695.33 KB
Total Pages15
ManufacturerNexperia
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PMEG3010AESBZ, PMEG3010AESBYL
Description DIODE SCHOTTKY 30V 1A DSN1006-2, DIODE SCHOTTKY 30V 1A SOD993

PMEG3010AESBZ - Nexperia

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The Products You May Be Interested In

PMEG3010AESBZ PMEG3010AESBZ Nexperia DIODE SCHOTTKY 30V 1A DSN1006-2 113

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PMEG3010AESBYL PMEG3010AESBYL Nexperia DIODE SCHOTTKY 30V 1A SOD993 47252

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URL Link

PMEG3010AESBZ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

480mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

3.5ns

Current - Reverse Leakage @ Vr

1.25mA @ 30V

Capacitance @ Vr, F

32pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

2-XDFN

Supplier Device Package

DSN1006-2

Operating Temperature - Junction

150°C (Max)

PMEG3010AESBYL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

480mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

3.5ns

Current - Reverse Leakage @ Vr

255µA @ 20V

Capacitance @ Vr, F

86pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

2-XDFN

Supplier Device Package

DSN1006-2

Operating Temperature - Junction

150°C (Max)