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PMDT290UCE Datasheet

PMDT290UCE,115 Cover
DatasheetPMDT290UCE,115
File Size1,072.4 KB
Total Pages20
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMDT290UCE,115
Description MOSFET N/P-CH 20V SOT666

PMDT290UCE,115 - Nexperia

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PMDT290UCE,115 PMDT290UCE,115 Nexperia MOSFET N/P-CH 20V SOT666 57492

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URL Link

PMDT290UCE,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

800mA, 550mA

Rds On (Max) @ Id, Vgs

380mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 10V

Power - Max

500mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666