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PMDPB65UP Datasheet

PMDPB65UP,115 Cover
DatasheetPMDPB65UP,115
File Size320.45 KB
Total Pages16
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMDPB65UP,115
Description MOSFET 2P-CH 20V 3.5A SOT1118

PMDPB65UP,115 - NXP

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PMDPB65UP,115 PMDPB65UP,115 NXP MOSFET 2P-CH 20V 3.5A SOT1118 209

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.5A

Rds On (Max) @ Id, Vgs

70mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 10V

Power - Max

520mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Supplier Device Package

DFN2020-6