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PMDPB38UNE Datasheet

PMDPB38UNE,115 Cover
DatasheetPMDPB38UNE,115
File Size329.99 KB
Total Pages14
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMDPB38UNE,115
Description MOSFET 2N-CH 20V 4A HUSON6

PMDPB38UNE,115 - NXP

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PMDPB38UNE,115 PMDPB38UNE,115 NXP MOSFET 2N-CH 20V 4A HUSON6 357

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

46mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

268pF @ 10V

Power - Max

510mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Supplier Device Package

DFN2020-6