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PHU66NQ03LT Datasheet

PHU66NQ03LT,127 Cover
DatasheetPHU66NQ03LT,127
File Size89.32 KB
Total Pages13
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PHU66NQ03LT,127, PHP66NQ03LT,127
Description MOSFET N-CH 25V 66A SPT533, MOSFET N-CH 25V 66A TO220AB

PHU66NQ03LT,127 - NXP

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PHU66NQ03LT,127 PHU66NQ03LT,127 NXP MOSFET N-CH 25V 66A SPT533 288

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PHP66NQ03LT,127 PHP66NQ03LT,127 NXP MOSFET N-CH 25V 66A TO220AB 135

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

93W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

93W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3