Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

PHP21N06LT Datasheet

PHP21N06LT,127 Cover
DatasheetPHP21N06LT,127
File Size229.11 KB
Total Pages12
ManufacturerNXP
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts PHP21N06LT,127, PHD21N06LT,118, PHB21N06LT,118
Description MOSFET N-CH 55V 19A TO220AB, MOSFET N-CH 55V 19A DPAK, MOSFET N-CH 55V 19A D2PAK

PHP21N06LT,127 - NXP

PHP21N06LT Datasheet Page 1
PHP21N06LT Datasheet Page 2
PHP21N06LT Datasheet Page 3
PHP21N06LT Datasheet Page 4
PHP21N06LT Datasheet Page 5
PHP21N06LT Datasheet Page 6
PHP21N06LT Datasheet Page 7
PHP21N06LT Datasheet Page 8
PHP21N06LT Datasheet Page 9
PHP21N06LT Datasheet Page 10
PHP21N06LT Datasheet Page 11
PHP21N06LT Datasheet Page 12

The Products You May Be Interested In

PHP21N06LT,127 PHP21N06LT,127 NXP MOSFET N-CH 55V 19A TO220AB 203

More on Order

PHD21N06LT,118 PHD21N06LT,118 NXP MOSFET N-CH 55V 19A DPAK 219

More on Order

PHB21N06LT,118 PHB21N06LT,118 Nexperia MOSFET N-CH 55V 19A D2PAK 1756

More on Order

URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

PHB21N06LT,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB