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PHN203 Datasheet

PHN203,518 Cover
DatasheetPHN203,518
File Size762.04 KB
Total Pages13
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHN203,518
Description MOSFET 2N-CH 30V 6.3A SOT96-1

PHN203,518 - Nexperia

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PHN203,518 PHN203,518 Nexperia MOSFET 2N-CH 30V 6.3A SOT96-1 205

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URL Link

PHN203,518

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.3A

Rds On (Max) @ Id, Vgs

30mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 20V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO