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| Datasheet | PHD38N02LT,118 |
| File Size | 201.27 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHD38N02LT,118 |
| Description | MOSFET N-CH 20V 44.7A DPAK |
PHD38N02LT,118 - Nexperia
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PHD38N02LT,118 | Nexperia | MOSFET N-CH 20V 44.7A DPAK | 267 More on Order |
URL Link
www.oemstron.com/datasheet/PHD38N02LT,118
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 44.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 16mOhm @ 25A, 5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 20V FET Feature - Power Dissipation (Max) 57.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |