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| Datasheet | PHD23NQ10T,118 |
| File Size | 102.16 KB |
| Total Pages | 12 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHD23NQ10T,118 |
| Description | MOSFET N-CH 100V 23A DPAK |
PHD23NQ10T,118 - NXP
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PHD23NQ10T,118 | NXP | MOSFET N-CH 100V 23A DPAK | 272 More on Order |
URL Link
www.oemstron.com/datasheet/PHD23NQ10T,118
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1187pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |