Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | PHB32N06LT,118 |
| File Size | 851.58 KB |
| Total Pages | 11 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHB32N06LT,118 |
| Description | MOSFET N-CH 60V 34A D2PAK |
PHB32N06LT,118 - Nexperia
The Products You May Be Interested In
 |
PHB32N06LT,118 | Nexperia | MOSFET N-CH 60V 34A D2PAK | 5037 More on Order |
URL Link
www.oemstron.com/datasheet/PHB32N06LT,118
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 5V Rds On (Max) @ Id, Vgs 37mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V FET Feature - Power Dissipation (Max) 97W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |