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| Datasheet | PH3855L,115 |
| File Size | 184.86 KB |
| Total Pages | 12 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PH3855L,115 |
| Description | MOSFET N-CH 55V 24A LFPAK |
PH3855L,115 - NXP
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PH3855L,115 | NXP | MOSFET N-CH 55V 24A LFPAK | 113 More on Order |
URL Link
www.oemstron.com/datasheet/PH3855L,115
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 36mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 765pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |