Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

PBRN123YS Datasheet

PBRN123YS,126 Cover
DatasheetPBRN123YS,126
File Size736.87 KB
Total Pages17
ManufacturerNXP
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts PBRN123YS,126, PBRN123YK,115, PBRN123YT,215
Description TRANS PREBIAS NPN 0.7W TO92-3, TRANS PREBIAS NPN 250MW SMT3, TRANS PREBIAS NPN 250MW TO236AB

PBRN123YS,126 - NXP

PBRN123YS Datasheet Page 1
PBRN123YS Datasheet Page 2
PBRN123YS Datasheet Page 3
PBRN123YS Datasheet Page 4
PBRN123YS Datasheet Page 5
PBRN123YS Datasheet Page 6
PBRN123YS Datasheet Page 7
PBRN123YS Datasheet Page 8
PBRN123YS Datasheet Page 9
PBRN123YS Datasheet Page 10
PBRN123YS Datasheet Page 11
PBRN123YS Datasheet Page 12
PBRN123YS Datasheet Page 13
PBRN123YS Datasheet Page 14
PBRN123YS Datasheet Page 15
PBRN123YS Datasheet Page 16
PBRN123YS Datasheet Page 17

The Products You May Be Interested In

PBRN123YS,126 PBRN123YS,126 NXP TRANS PREBIAS NPN 0.7W TO92-3 332

More on Order

PBRN123YK,115 PBRN123YK,115 NXP TRANS PREBIAS NPN 250MW SMT3 438

More on Order

PBRN123YT,215 PBRN123YT,215 Nexperia TRANS PREBIAS NPN 250MW TO236AB 25891

More on Order

URL Link

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

700mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3; MPAK

PBRN123YT,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB