Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NXPSC08650DJ |
| File Size | 272.44 KB |
| Total Pages | 10 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NXPSC08650DJ |
| Description | DIODE SCHOTTKY 650V 8A DPAK |
NXPSC08650DJ - WeEn Semiconductors
The Products You May Be Interested In
 |
NXPSC08650DJ | WeEn Semiconductors | DIODE SCHOTTKY 650V 8A DPAK | 271 More on Order |
URL Link
www.oemstron.com/datasheet/NXPSC08650DJ
|
Manufacturer WeEn Semiconductors Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 230µA @ 650V Capacitance @ Vr, F 260pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK Operating Temperature - Junction 175°C (Max) |