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| Datasheet | NXPSC04650DJ |
| File Size | 291.8 KB |
| Total Pages | 11 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NXPSC04650DJ |
| Description | DIODE SCHOTTKY 650V 4A DPAK |
NXPSC04650DJ - WeEn Semiconductors
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NXPSC04650DJ | WeEn Semiconductors | DIODE SCHOTTKY 650V 4A DPAK | 384 More on Order |
URL Link
www.oemstron.com/datasheet/NXPSC04650DJ
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Manufacturer WeEn Semiconductors Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.7V @ 4A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 170µA @ 650V Capacitance @ Vr, F 130pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK Operating Temperature - Junction 175°C (Max) |