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| Datasheet | NXPSC04650BJ |
| File Size | 277.4 KB |
| Total Pages | 10 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NXPSC04650BJ |
| Description | DIODE SCHOTTKY 650V 4A D2PAK |
NXPSC04650BJ - WeEn Semiconductors
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NXPSC04650BJ | WeEn Semiconductors | DIODE SCHOTTKY 650V 4A D2PAK | 456 More on Order |
URL Link
www.oemstron.com/datasheet/NXPSC04650BJ
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Manufacturer WeEn Semiconductors Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.7V @ 4A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 170µA @ 650V Capacitance @ Vr, F 130pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK Operating Temperature - Junction 175°C (Max) |